Direct Simulation Monte Carlo Analysis of Rarefield Gas Flow Structures and Ventilation of Etching Gas in Magneto-Microwave Plasma Etching Reactors  

Oleh:

Ogawa, Yoshihumi ; Ikegawa, Masato ; Fukuyama, Ryoji ; Tanaka, Jun'ichi ; Usui, Tatehito

Jenis: Article from Bulletin/Magazine
Dalam koleksi: Journal of Fluids Engineering vol. 124 no. 2 (2002), page 476-482.
Topik: MICROWAVES; direct simulation; monte carlo analysis; rarefield gas; flow structures; ventilation; gas; magneto - microwave plasma; reactors

Ketersediaan

Perpustakaan Pusat (Semanggi) Nomor Panggil: JJ89.3 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

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Isi artikel

Gas flows in plasma etching reactors for semiconductor fabrication became a chief consideration in designing second - generation reactors with higher etching rates. An axisymmetrical model based on the direct simulation Monte Carlo method has been developed for analyzing rarefied gas flows in a vacuum chamber with the conditions of downstream pressure and gas flow rate. By using this simulator, rarefied gas flows with radicals and etch - products were calculated for microwave - plasma etching reactors. The results showed that the flow patterns in the plasma chamber strongly depend on the Knudsen number and the gas - supply structure. The ventilation of the etch - products in the plasma chamber was found to be improved both for higher Knudsen numbers and for gas - supply structures of the downward - flow type, as compared with those of the radial - flow or upward - flow types.

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