The Build-Up Layer AOI Yield Improvement for FCBGA Product  

Oleh:

Liu, Ken ; Fei, Arthur ; Huang, DC

Jenis: Article from Proceeding
Dalam koleksi: 12th ANQ Congress in Singapore, 5-8 Agustus 2014, page 1-9.
Topik: IC-Carrier; FCBGA (Flip Chip Ball Grid Array); Six Sigma Methodology; Build Up Layer; Yield Improvement
Fulltext: PS-1.14-P0426.pdf (1.1MB)

Isi artikel

This paper presents a Six Sigma project conducted at build up layer AOI yield improvement for FCBGA (Flip Chip Ball Grid Array) product with 13/14 um fine line space pattern. A new FCBGA product with 13/14 um line space pattern produced in Unimicron Technology Corp. from 2013 January. There was 30.09% Open/Short defect rate in build-up layer AOI yield of this new product. This paper shows how to reduce defect rate to improve yield by using Six Sigma Methodology. First, we define problem by AOI defect rate data and defect pattern analysis during 3 Month. Then, we use Pareto chart to classify our defect type. According to the analysis results, we confirm that the root causes can be classified to “Damage” and “FM” type. We focus on Open/Short defect improvement in lithograph process by using Six Sigma Methodology. Finally, the Open/Short defect rate of FCBGA product is reduced from 30.09% to 22.72% and this yield improvement experience can be useful to help us in the same generation product

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