An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices  

Oleh:

Bentrcia, Toufik ; Djeffal, Faycal

Jenis: Article from Books - E-Book
Dalam koleksi: Transactions on Engineering Technologies: Special Volume of the World Congress on Engineering 2013, page 339-353.
Topik: DG MOSFET; Functions; Hot carrier; Learning algprithm; Membership; Quantum confinement; Short channel; Threshold voltage
Fulltext: 25_978-94-017-8831-1_Bentrcia_Djefall.pdf (729.18KB)

Isi artikel

Nowadays, the tremendous shrinking of electronic devices has reduced their sizes to very low scales. However, this process has been accompanied unavoidably with many well-recognized reliability challenges basically for MOSFET devices. Our objective, in this work, is the proposition of an Adaptive Network based Fuzzy Inference System (ANFIS) to study the threshold voltage behavior caused by the interface traps generated by the ageing mechanism phenomenon. The consideration of a nanoscale DG MOSFET device makes the application of compact modeling tools a very hard task to carry out, due to approximations made during model development. The obtained results are in a good agreement with numerical simulations based on Atlas 2D-simulator. In addition, the comparison with a feed-forward artificial neural network shows that our fuzzy system provides higher accuracy performances. The proposed approach can be incorporated in Integrated Circuit modeling frameworks in order to support more complex degradation situations.

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