Observation of Photovoltaic Effect and Single-Photon Detection in Nanowire Silicon pn-Junction  

Oleh:

Udhiarto, Arief ; Purwiyanti, Sri ; Moraru, Daniel ; Mizuno, Takeshi ; Tabe, Michiharu

Jenis: Article from Journal - ilmiah nasional - terakreditasi DIKTI
Dalam koleksi: Makara Journal of Technology vol. 17 no. 2 (Aug. 2013), page 64-68.
Topik: Dopant Cluster; Nanowire pn-Junction; Single Dopant; Single Photon
Fulltext: 264-294-1-PB.pdf (679.94KB)

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Perpustakaan Pusat (Semanggi) Nomor Panggil: MM64 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

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Isi artikel

We study nanowire silicon pin and pn-junctions at room and low temperature. Photovoltaic effects are observed for both devices at room temperature. At low temperature, nanowire pn-junction devices show their ability to detect single photon. This ability was not been observed for pin devices. Phosphorus-boron dopant cluster in the depletion region is considered to have the main role for single-photon detection capability. Fundamental mechanism of dopant-based single-photon detection in nanowire pn-junction is described in details.

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