A Micro Active Probe Device Compatible With SOI-CMOS Technologies  

Oleh:

Saitoh, M. ; Kondoh, Y. ; Ihara, K. ; Yi, Y.-W.

Jenis: Article from Bulletin/Magazine
Dalam koleksi: Journal of Microelectro Mechanical System vol. 6 no. 3 (1997), page 242-248.
Topik: magnetic devices; micro active; probe device; compatible; technologies

Ketersediaan

Perpustakaan Pusat (Semanggi) Nomor Panggil: JJ30.2 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

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Isi artikel

A surface - micromachined active probe device with built - in electrostatic actuator and on - chip CMOS circuits is described. The device has been fabricated on a silicon - on - insulator (SOI) substrate using a 0.6 - µm CMOS - based process containing four polysilicon layers and one metal layer, and its basic functionality has been verified experimentally. A 0.135 - µm - thick surface silicon layer of an SOI substrate was used to form cantilever beams. The very thin structures enable a probe to be turned on at a voltage as low as several volts. A stopper structure, used to avoid contact between a deflector electrode and its paired stator electrode, was formed with a small overlap area of approximately 0.05 µm(2). The small overlap area results in a small adhesion force, approximately 70 nN. An n - p -n junction was exploited as an isolator in the probe. A p - n junction in a released beam had only a 5 - pA leakage current at a 9 - V reverse bias. In addition, it has been found that electrostatic charging is a major source causing unrestorable postrelease stiction.

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