Detail Etch Rates of Micromachining Processing   Oleh:  Muller, R. S. ; Williams, K. R. Jenis: Article from Bulletin/Magazine Dalam koleksi: Journal of Microelectro Mechanical System vol. 5 no. 4 (1996), page 256-269. Topik: DATA PROCESSING; etch rates; micromachining; processing Ketersediaan Perpustakaan Pusat (Semanggi) Nomor Panggil: JJ30.1 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada     Lihat Detail Induk Isi artikel The etch rates for 317 combinations of 16 materials (single - crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon - rich silicon nitride, aluminum, tungsten, titanium, Ti / W alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless - gas - phase etches (several HF solutions, H(3))PO(4), HNO(3) + H(2)O + NH(4)F, KOH, Type A aluminum etchant, H(2)O + H(2)O(2) + HF, H(2)O(2), piranha, acetone, HF vapor, XeF(2), and various combinations of SF(6), CF(4), CHF(3), Cl(2), O(2), N(2), and He in plasmas) were measured and are tabulated. Etch preparation, use, and chemical reactions (from the technical literature) are given. Sample preparation and MEMS applications are described for the materials. Opini Anda Klik untuk menuliskan opini Anda tentang koleksi ini! Kembali

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