Detail Released Si Microstructures Fabricated By Deep Etching and Shallow Diffusion   Oleh:  Pang, S. W. ; Juan, Wen-Han Jenis: Article from Bulletin/Magazine Dalam koleksi: Journal of Microelectro Mechanical System vol. 5 no. 1 (1996), page 18-23. Topik: diffusion; microstructures; deep etching; shallow diffusion Ketersediaan Perpustakaan Pusat (Semanggi) Nomor Panggil: JJ30.1 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada     Lihat Detail Induk Isi artikel A novel etch - diffusion process is developed for fabricating high - aspect - ratio Si structures for microsensors. This is accomplished by first dry etching narrow gap Si microstructures using an electron cyclotron resonance (ECR) source, followed by a shallow B diffusion to fully convert the etched microstructures to p(++) layer. Microstructures up to 40 µm deep with 2 -µm - wide gaps were etched with a Cl(2) plasma generated using the ECR source. Vertical profile and smooth morphology were obtained at low pressure. A shallow B diffusion at 1175 °C for 5.5 h. was then carried out to convert the 40 - µm - thick resonant elements to p(++) layer. A second dry etching step was used to remove the thin p(++) layer around the bottom of the resonant elements, followed by bonding to glass and selective wet etch. Released high - aspect - ratio Si microsensors with thicknesses of 35 µm have been demonstrated. At atmospheric pressure, only 5 V(dc) driving voltage is needed for 2.5 µm vibration amplitude, which is less than the 10 V(dc) required to drive 12 - µm - thick resonators fabricated by conventional dissolved wafer process Opini Anda Klik untuk menuliskan opini Anda tentang koleksi ini! Kembali

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