Simulasi Ketergantungan Karakteristik NDR Swich Gaas-in ga as Terhadap Fraksi Mol In  

Oleh:

Hidayat, Achmad

Jenis: Article from Journal - ilmiah nasional
Dalam koleksi: Jurnal Ilmu-Ilmu Teknik (Engineering) vol. 18 no. 1 (Apr. 2006), page 1-6.
Topik: Resonant Tunneling; Switch; NDR; PVCR

Ketersediaan

Perpustakaan Pusat (Semanggi) Nomor Panggil: JJ106 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

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Isi artikel

Since firstly discovered (Esaki, 1958), development of devices based on quantum phenomenal was interesting for many researchers both theoretically and experimentally The I-V(current-voltage) characteristics of N-shaped resonant tunneling devices with non linier behaviors were one of interesting factors. As a alternative candidate for this group, a triangular barrier resonant tunneling switch GaAs-InxGa1-xAs is promising. In this theoretical study; the effect of In-mole fraction in a triangular barrier resonant tunneling switch, GaAs-InxGa1-xAs has been investigated. Based on TMA (Transfer Matrix Approach), the NDR (Negative Differential Resistance) characteristic of device with variation of In-mol fraction was demonstrated in I-V graphics. Simulation of device’s characteristics was displayed using MATLAB*. This studies involved observation of the dependence of NDR- characteristic change to In-mole fraction change. The effects of In-mole fraction change to switching parameters i.e. Jp, (peak current), Jv,, (valley current), Vp, (peak voltage), Vv, (valley voltage) and PVCR (peak to valley current ratio), have been also observed. The results show that all parameters change with In-mole fraction change and Jp, tends to increase while Jv tends to constant with rising In-mole fraction. Both Vp and Vv tend to increase with increasing In-mole fraction. All parameters change drastically above x = 0,7 where value of PVCR is maximum i.e. 5,01, so that NDR characteristics of device depend on In-mole fraction.

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