Studies of Random Ion Implantations and Their Effects on Gaas Samples Using Rutherford Backscattering Channeling Spectrometry  

Oleh:

Rofi'i, Imam

Jenis: Article from Journal - ilmiah nasional - tidak terakreditasi DIKTI
Dalam koleksi: SIGMA: Jurnal Sains dan teknologi vol. 10 no. 1 (Jan. 2007), page 15-23.
Topik: Random Implantation; Cristal Damage; RBS Channeling; Damage Profile

Ketersediaan

Perpustakaan Pusat (Semanggi) Nomor Panggil: SS25.6 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

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Isi artikel

In this research, damage profiles of random implanted SI-GaAs samples were investigated using Rutherford Backscattering (RBS) Channeling Spectrometry. Random implantations were ferformed using 400 keV germanium ions with several ion doses, namely: 3x101 , 1x1013, 3x10 , 1x1012, 3x1011, and 1x1011 ions/cm3. The effects of ion doses on the crystal structures of GaAs samples were studied. The results showed that RBS yields were monotonically effected by the ion dose of implantations. The damage profiles of GaAs samples were also compared and analyzed using TRIM 98 calculation. These results clearly indicated that the RBS yields and the RBS profiles corresponded to the damage induced by ion implantation in the GaAs samples.

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