Detail Radiation Dose Measurement Using MOSFETs   Oleh:  Sarrabayrouse, G. ; Siskos, S. Jenis: Article from Bulletin/Magazine Dalam koleksi: IEEE Instrumentation & Measurement Magazine vol. 1 no. 2 (1998), page 26-34. Topik: radiation; radiation dose; measurement; MOSFETs Ketersediaan Perpustakaan Pusat (Semanggi) Nomor Panggil: II47.1 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada     Lihat Detail Induk Isi artikel The MOS transistor as a radiation dose detector has been presented. MOS transistors present advantages such as low cost, small volume and weight, robustness, accuracy, large measurable dose range, and sensitivity to low -energy radiation (10 keV). They are useful in real - time measurements or post - irradiation read - out, while they retain information after reading. The sensitivity of unbiased MOSFET s has been improved, and further improvement is possible by increasing the oxide thickness via dual dielectrics or by using ion-implanted oxides and stacked MOSFET configurations. The stacked - transistor configuration is a very promising solution to reach the mRad range (personnel dosimetry). MOSFET s are already used in various application fields with increasing interest for use in specific cases of in - vivo dosimetry. Opini Anda Klik untuk menuliskan opini Anda tentang koleksi ini! Kembali

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