Film Tipis Rutile Co-TiO2 yang ditumbuhkan dengan teknik MOCVD : Pengaruh Suhu Anil terhadap Struktur Kristal  

Oleh:

Ridwan ; Mujamilah ; Barmawi, Mohamad ; Saragih, Horasdia ; Arifin, Pepen

Jenis: Article from Journal - ilmiah nasional - tidak terakreditasi DIKTI
Dalam koleksi: Jurnal Sains Materi Indonesia vol. 7 no. 1 (2005), page 72.
Topik: MOCVD; annealing; rutile phase; Co-TiO2 thin film

Ketersediaan

Perpustakaan Pusat (Semanggi) Nomor Panggil: JJ112.2 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

Lihat Detail Induk

Isi artikel

Film tipis Rutile Co-TiO2 yang ditumbuhkan dengan teknik MOCVD: Pengaruh Suhu Anil terhadap struktur kristal. The Co-TiO2 thin films were grown by MOCVD technique on Si (100) substrates by using titanium tetra isopropoxide [Ti(OCH(CH3)2)4] and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) cobalt (III), Co (TMHD), metal organic precursors. The thin films with single plane structure of rutile (002) were obtained by using growth parameters as follow L titanium bubbler temperautre (Tb(Ti) = 50 Celcius Degree, substrate temperature (T8) = 450 Celcius Degree, titanium bubbler pressuer (Pb(Ti)= 260 Torr, flow rate of argin gas throught titanium bubbler Ar (Ti) = 100 sccm, flow rate of oxygen gas o2 = 60 sccm, total pressue of growth (P Tot) = 2 Torr and flow rate of argon gas throught cobalt bubbler Ar (Co) <= 60 sccm. The thin films were annealed at temperature of 450, 500, 550 Celcius Degreefor 3 hour, respectively. the annealing process were could improve the crystal structure if utile (002). the FWCH of rutile (002)planes were decreased with increasing of annealing temperature.

Opini Anda

Klik untuk menuliskan opini Anda tentang koleksi ini!

Kembali