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Sel Surya Lapisan Tipis a-Si : H Devais p-i-n Pemanfaatan dan Karakteristiknya
Oleh:
Yuniantoro, Indrianto
Jenis:
Article from Journal - ilmiah nasional - tidak terakreditasi DIKTI
Dalam koleksi:
Widya: Majalah Ilmiah vol. 16 no. 162 (Mar. 1999)
,
page 22.
Topik:
sel surya lapisan tipis
;
sel surya a-Si : p-i-n
Ketersediaan
Perpustakaan Pusat (Semanggi)
Nomor Panggil:
MM47.13
Non-tandon:
1 (dapat dipinjam: 0)
Tandon:
tidak ada
Lihat Detail Induk
Perpustakaan PKPM
Nomor Panggil:
W36
Non-tandon:
1 (dapat dipinjam: 0)
Tandon:
tidak ada
Lihat Detail Induk
Isi artikel
This paper has reviewed the preparation of doped depositions in amorphous silicon solar cells for optical bandwidth. Its application, physical characteristics and doping technology in the growth, of p-i-n thin layers in solar cells also have been discussed. Doping process on intrinsic layers of solar cells with boron and phosphorous in weighed proportion have produced p-layer and n-layer of these cells. The depth of each layer will determine its optical bandwith. The optimization of efficiency in the village development program. Market infrastructure improvement program, urabn road, urban flood control and housing. Operation of urban infrastructure activity are all activities directed to supply or provide urban services efficient and effectively. Maintenance activities are all activities directed ti ensure that existing urban facilities aer in good condition, efficient, effective and safe.
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