Lapisan Tipis a-uc-Si:H: Proses Deposisi dan Potensi Aplikasinya dalam Devais  

Oleh:

Atmadi, A.

Jenis: Article from Journal - ilmiah nasional - tidak terakreditasi DIKTI
Dalam koleksi: SIGMA: Jurnal Sains dan teknologi vol. 3 no. 1 (Jan. 2000), page 29-36.
Topik: microelectronic; partial chemical equilibrium; grain size; crystallite volume fraction; optoelectronic

Ketersediaan

Perpustakaan Pusat (Semanggi) Nomor Panggil: SS25.2 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

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Isi artikel

Hydrogenated amorphous-microcrystalline silicon (a-pc-Si.H) is a new fast growing thin film semiconductor. The growing interest in a-pc-Si:H is due to two main factors: 1) The possibility to produce a-,uc-Si:H simply by modiflng some of the deposition parameters used for preparation of hydrogenated amorphous silicon (a-Si:H) is attractive from the application point of view, and 2) As its structure lies between purely amorphous and polycrystalline phase, the material is interesting from the physicist’s point of view. The a-pc-Si:H, together with a-Si:H, are potential new materials for optoelectronic devices such as solar cells, flat panel displays and large area microelectronics

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