Mekanisme Terjadinya Gangguan Elektris Akibat Tembusan Radiasi Alpha  

Oleh:

Setiyani, Th. Prima Ari

Jenis: Article from Journal - ilmiah nasional - tidak terakreditasi DIKTI
Dalam koleksi: SIGMA: Jurnal Sains dan teknologi vol. 4 no. 1 (Jan. 2001), page 51-57.
Topik: Alphan radiation; energy-deposit; semiconductor; soft-error

Ketersediaan

Perpustakaan Pusat (Semanggi) Nomor Panggil: SS25.3 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

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Isi artikel

The fusion reaction of neutron and silicon atoms could produce an (n, alpha) reaction, creating two charged particles, i.e. alpha and magnesium, each of which has some amount of energy-deposit. These particles are moving in an unpredictable direction. If this reaction occurs on semiconductor devices, especially memory cells, the alpha particle spends its energy-deposit producing electron-hole pair along its path. In the sensitive area, if the electron-hole pair production induces a pulse higher than the threshold voltage, the cell's state will be upset. The upset of the memory cell's state is called soft-error. This paper discusses the effects of alpha radiation and describes the soft-error mechanism.

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