Side Effects in a HEMT Performance with InAlN/GaN  

Oleh:

Kourdi, Z. ; Bouazza, B. ; Guen-Bouazza, A. ; Khaouani, M.

Jenis: Article from Journal - ilmiah nasional - terakreditasi DIKTI
Dalam koleksi: Telkomnika Indonesian Journal of Electrical Engineering vol. 15 no. 02 (Aug. 2015), page 249-258.
Topik: HEMT; InAlN/GaN; silvaco; side effect; power electronics devices; semiconductors devices.
Fulltext: 8098-18564-1-PB.pdf (380.1KB)

Isi artikel

We present a simulation of a HEMT (high electron mobility transistor) structure. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 30 nm, and InAlN/GaN heterostructure for minimizing side effects. The simulated with Silvaco software of the HEMT devices with the materials InAlN show very good scalability in different application. We have demonstrated an excellent current density, as high as 644 mA/mm, a peak extrinsic transconductance of 710 mS/mm at V =2 V, and cutting frequency cutoffs of 385 GHZ, maximum frequency of 810 GHz, maximum efficiency of 23% for x-Band, maximum breakdown voltage of 365 V, and an ON/OFF current density ratio higher than 8 x 10 Received May 14, 2015; Revised June 29, 2015; Accepted July 14, 2015 DS 8 . These values were determined through the simulation by hydrodynamics models, which makes that optimize the design is the future of this technology.

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