Pembuatan Serat Silikon Nitrida dengan Berkas Elektron  

Oleh:

Yunasfi

Jenis: Article from Journal - ilmiah nasional - tidak terakreditasi DIKTI - atma jaya
Dalam koleksi: Metris: Jurnal Mesin, Elektro, Industri dan Sains vol. 6 no. 4 (Dec. 2005), page 255-258.
Topik: Silicon Nitride Fiber; Electron Beam; Curing Process.
Fulltext: Yunasfi-Bernard.pdf (5.4MB)

Isi artikel

Preparation of silicon nitride fiber utilizing electron beam. The utilizing of silicon nitride (Si3N4) fiber as electrical insulation materials have drawn attention from the industries, due to its superior performance at high temperature. Traditionally, the Si3N4 fiber is prepared from inorganic polymer of polycarbosilane (PCS) as the raw material which is then synthesized using thermal oxidation method., however, the resulting fiber has the maximum heat resistance of less then 1000 °C. The thermal oxidation method cuase too much induction of oxygen into Si3N4 fiber, such that it reduces the tensile strength of the fiber causes deterioration of the fiber at high temperature. With the advances in technology, while still using the same basic materials, i.e. inorganic polymer of PCS, the Si3N4 fiber can now be prepared using a different method which utilizes electron beam, and then it is heated in liquid NH3 at various temperature (1000 "C up to 1400 C °C). The resulting fiber from this process has a higher heat resistance (up to approximately 1300 °C). In the preparation process of Si3N4 fiber, the electron beam is used during the radiation curing process. The interaction between the radiation and the PCS fibers produces reactive species which will eventually stimulate cross-linking reaction in the fiber. The purpose of the radiation curing process is to remove the oxygen from the fiber so that the resulting Si3N4 fiber is stronger and more stable

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