MOCVD Growth of Gasb and AlGaSb  

Oleh:

Sustini, E. ; Sugianto ; Arifin, P. ; Barmawi, M.

Jenis: Article from Bulletin/Magazine
Dalam koleksi: Proceedings Institut Teknologi Bandung vol. 33 no. 1 (2001), page 5-8.
Topik: GaSb; AlGaSb; MOCVD
Fulltext: E. Sustini.PDF (582.45KB)

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Perpustakaan Pusat (Semanggi) Nomor Panggil: PP32 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

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Isi artikel

GaSb and AlGaSb are narrow gap semiconductors, is of current interest, for its optoelectronic application in the near and medium infra-red region. The large ratio of the ionization coefficient of hole and electrons is key factor for high speed and low noise in APD. In this paper we report the growth of GaSb and AlGaSb in a home made vertical MOCVD reactor using trimethylgalium (TMGa), trimethylaluminum (TMAl) and tridismethylaminoantimonat (TDMASb) as metalorganic sources. In the reactor we used a flow guide to obtain uniform layers. The effect of growth temperature and the V/III ratio on the structural properties, surface morphology, optical and electronic properties is presented.

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