Epitaxy of GaN Film by Hydrogen Plasma Assisted MOCVD  

Oleh:

Sugianto ; Subagio, A. ; Erzam ; Sani, R.A. ; Budiman, M. ; Arifin, P. ; Barmawi, M.

Jenis: Article from Bulletin/Magazine
Dalam koleksi: Proceedings Institut Teknologi Bandung vol. 33 no. 1 (2001), page 1-4.
Topik: GaN; Plasma-Assisted MOCVD; Buffer Layer; Hydrogen Plasma; Single Orientation
Fulltext: Sugianto.PDF (700.82KB)

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Perpustakaan Pusat (Semanggi) Nomor Panggil: PP32 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

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Isi artikel

We have studied the effect of hydrogen plasma on GaN film, grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). GaN films grown on sapphire (0001) without the buffer layer have a polycrystalline structure. While films grown using a the buffer layer tend to have a single crystal orientation. We have tried to increase the growth rate by varying the TMGa:N ratio. We found that the growth rate of the films were 450nm/h with TMGa:N ratio of 1:600. However the films shows a polycrystalline structure. Using hydrogen plasma during the growth, we have shown by XRD analysis that the films structure was highly oriented in (0002) plane parallel to the substrate and the crystalline quality is improved.

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