Detail On Hillocks Generated During Anisotropic Etching of Si in TMAH   Oleh:  Paranjape, M. ; Landsberger, L. M. ; Kahrizi, M. ; Naseh, S. Jenis: Article from Bulletin/Magazine Dalam koleksi: Journal of Microelectro Mechanical System vol. 5 no. 2 (1996), page 106-116. Topik: CHEMICALS; hillocks; anisotropic Ketersediaan Perpustakaan Pusat (Semanggi) Nomor Panggil: JJ30.1 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada     Lihat Detail Induk Isi artikel Hillocks on etched Si{100} surfaces produced by anisotropic etching are a common irritant in the creation of micromachined devices. Close inspection of typical pyramidal hillock shapes reveals that they are usually bounded by convex <101> - directed edges and {111} or near - {111} planes. Underetch experiments at varying TMAH etchant composition confirm that the etch rates of {101} planes and {100} planes vary with etchant conditions. Hillocks are suppressed when {101} etches faster than {100}, which occurs when the TMAH concentration is low. A simple model involving kinks and ledges is proposed and allows direct relation of hillock features to etch anisotropy. Hillocks are hypothesized to be stable due to a lower etch rate for <101> ledges adjacent to the etched surface. The apex of the pyramids may be protected by impurities or defects. Re - etch experiments indicate that hillock - producing conditions are quite sensitive to etchant conditions. Opini Anda Klik untuk menuliskan opini Anda tentang koleksi ini! Kembali

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