Brighter and Cheaper  

Oleh:

Teschler, Leland

Jenis: Article from Bulletin/Magazine - ilmiah internasional
Dalam koleksi: Machine Design (Soft Copy ada dalam http://search.proquest.com/) vol. 83 no. 12 (Jul. 2011), page 49-51.
Topik: Light Emitting Diodes; Production Costs; Chemical Vapor Deposition; Machinery Industry; Product Development

Ketersediaan

Perpustakaan Pusat (Semanggi) Nomor Panggil: MM44 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada

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Isi artikel

The process of making high-brightness LEDs is not as mature as that of making high-volume integrated circuits. One reason it costs more to fabricate LEDs than ICs is that LED chips are made on smaller wafers and, thus, entail higher handling costs. Most high-volume ICs are cut from silicon wafers that are 300 mm in diameter. In contrast, high-brightness LEDs are on sapphire wafers, not silicon. LEDs also use a fabrication process unlike that of ordinary ICs. The layers of LEDs are formed through use of metalorganic chemical-vapor deposition (MOCVD). The typical procedure for growing films with MOCVD starts with positioning the wafer on a platform called a susceptor, inside a reactor chamber. There are two main suppliers of MOCVD systems, Aixtron SE in Germany and Veeco Instruments Inc in Plainview, NY. Both are devising enhancements for their equipment aimed at boosting production throughput. Aixtron recently devised a MOCVD system called the AIX G5 1-IT, which simultaneously deposits GaN and related alloys on eight 6-in. wafers.

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