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BukuElectron microscopy and analysis, 1979
Bibliografi
Author: Mulvey, T. (Editor)
Topik: electron microscopy; electron microscope; instrumentation; minerals; materials; image contrast; beam-sensitive materials; microanalysis; surface science; high resolution studies; ELECTRON MICROSCOPY
Bahasa: (EN )    ISBN: 0-85498-143-8    Edisi: 7th ed    
Penerbit: Institute of Physics     Tahun Terbit: 1980    
Jenis: Books
Ketersediaan
  • Perpustakaan Pusat (BSD)
    • Nomor Panggil: 502.8 ELE
    • Non-tandon: 1 (dapat dipinjam: 1)
    • Tandon: tidak ada
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Artikel dalam koleksi ini
  1. Plenary lecture: improvement of resolution for the crystal structure image and dynamic observation of movement of atoms and atom clusters, halaman 3-8
  2. Another way to form zone axis patterns, halaman 9-12
  3. A novel optical diffractometer for image analysis, halaman 13-16
  4. A novel method for determining crystal orientations from selected area channeling patterns, halaman 17-20
  5. A new method for measuring crack tip strains, halaman 21-24
  6. History of the electron microscope, halaman 25-30
  7. A superconducting lens system for electron microscopes with beam voltages up to 500 kV, halaman 31-34
  8. A high resolution double tilt cooling stage for a high voltage electron microscope, halaman 35-38
  9. A liquid helium cooled environmental cell for the JEOL 200A TEM, halaman 39-42
  10. A specimen transfer device to combine Auger/RHEED and TEM studies: some results with aluminium, halaman 43-46
  11. The relationship between probe size and current when there are restrictions on the probe divergence, halaman 47-48
  12. Analysis of the single pole lens by finite element computation, halaman 49-52
  13. Limitations of the finite element method, halaman 53-54
  14. The single pole magnetic lens as a condenser for use with field-emission electron guns, halaman 55-58
  15. The axial field distribution of single polepiece lenses, halaman 59-60
  16. A double lens system for the correction of spiral distortion, halaman 63-64
  17. The electron optical performance of a FEG-SEM column, halaman 65-68
  18. A computer aided system for topographical analysis in the SEM, halaman 69-72
  19. Online computation of diffractograms for the analysis of SEM images, halaman 73-76
  20. Image recording in the CTEM using charge coupled devices, halaman 77-80
  21. Direct display of TEM images and EEL spectra using self scanned linear silicon photodiode arrays, halaman 81-84
  22. A multi channel detector system for SEM, halaman 85-88
  23. New detector systems for conversion of backscattered to secondary electrons, halaman 89-92
  24. Recent results from high resolution TEM of minerals, halaman 93-98
  25. Disordered intermediates between jimthompsonite and anthophyllite from the Swiss alps, halaman 99-100
  26. The high resolution electron microscopy of silicates at high voltage, halaman 101-104
  27. Inverted pigeonites from Rogaland, SW Norway, halaman 105-108
  28. Polytypism in xonotlite, Ca6Si6O17(OH)2, halaman 109-112
  29. Multiple scattering of electrons in the identification of intergrown polytypes: polytypism of chloritoid, halaman 113-116
  30. Exsolution in sodium rich plagioclases, halaman 117-120
  31. The structure of dislocations in quartz under electron irradiation, halaman 121-124
  32. The application of Lorentz electron microscopy to the study of rock magnetism, halaman 125-128
  33. Electron energy loss spectroscopy: elemental analysis in materials science , halaman 129-134
  34. Application of EBIC to displacement energy determination, halaman 135-136
  35. Inhibition of electron beam damage in the depletion layer of p-n junctions in silicon, halaman 137-140
  36. Electron channeling application in dislocations imaging with a SEM, halaman 141-144
  37. Crystal growth and dopant redistribution in ion implanted and laser annealed silicon, halaman 145-148
  38. High resolution microscopy of ion implanted amorphous silicon, halaman 149-152
  39. Experimental procedures for preparing 90 degrees cross section and 1 degree angle lap TEM specimens of semiconductor materials, halaman 153-156
  40. Nickel germanium gold contacts to gallium arsenide, halaman 157-160
  41. Cathodoluminescence in deformed MgO observed by scanning transmission electron microscopy, halaman 161-164
  42. Electron microscopy in metallurgy, halaman 165-170
  43. An application of weak beam microscopy to the study of precipitation on dislocations, halaman 171-174
  44. Application of high resolution electron microscopy to the microstructural analysis of a practical superalloy, halaman 175-178
  45. A study of linear dislocation multipoles in Cu-Al using weak beam electron microscopy, halaman 179-182
  46. Applications of STEM to materials science problems, halaman 183-188
  47. Hydrides in CANDU nuclear reactor pressure tube material, halaman 189-192
  48. A grain boundary sliding model, halaman 193-194
  49. On the structure of coherent twin boundaries in silicon, halaman 195-196
  50. Development and application of convergent beam electron diffraction, halaman 197-202
  51. Inelastic electron scattering: dynamical diffraction and a generalised dielectric response function, halaman 203-206
  52. The use of an optical potential in HEED: thermal averaging and dynamical diffraction, halaman 207-210
  53. The application of electron diffraction to determining bonding charge densities in crystals, halaman 211-214
  54. Dynamical diffraction theory for bicrystals, halaman 215-216
  55. White band contrast in thin foils, halaman 217-220
  56. Black white contrast of dislocation loops in cubic media, halaman 221-224
  57. TEM contrast of voids and the determination of void volumes, halaman 225-228
  58. Diffraction contrast from cavities in crystalline materials, halaman 229-232
  59. Elastic side band imaging of voids, halaman 233-236
  60. Contrast from individual cavities in the high voltage electron microscope, halaman 237-238
  61. Application of a STEM instrument to the study of crystals, halaman 239-244
  62. Matching STEM illumination to specimen structure, halaman 245-248
  63. Multi signal detection and processing in STEM, halaman 249-252
  64. A 2-D Computer Simulation of Partially Coherent Image Formation, in a Multiple, Centro Symetric Detector STEM, of Heavy Atom Model Compounds, halaman 253-256
  65. Applications of a STEM Equipped with a Quadrant Detector, halaman 257-260
  66. Z Contrast of Supported Catalyst Particles on the STEM, halaman 261-264
  67. Bright Field Hollow Cone Illumination-theory and experiment, halaman 265-268
  68. Dark Field Image Calculation, halaman 269-272
  69. Tilting and Defocus Effects in High Resolution Dark Field Images From Amorphous Materials, halaman 273-276
  70. Radiation Damage by Electrons, with Special Reference to the Knock on Process, halaman 277-282
  71. Investigations of Beam Sensitive Material with Superconducting Lenses, halaman 283-286
  72. Minimal Exposure Techniques in the Cambridge University 600 kV High Resolution Electron Microscope, halaman 287-290
  73. An investigation of the dehydration of ß-iron oxide, halaman 291-294
  74. Electron beam sensitivity and structure of the glassy phase of ceramics, halaman 295-298
  75. Structure of amorphous polymers, halaman 299-302
  76. An electron microscopic study of some 9 subtituted anthracenes, halaman 303-306
  77. In-situ experiments in the transmission electron microscope, halaman 307-312
  78. High voltage electron microscopy of hydrogen embrittlement and trapping in Al-Zn-Mg alloys, halaman 313-316
  79. The influence of crystalline defects upon the reduction of metal oxide catalysts, halaman 317-320
  80. In situ studies of the reduction of tungsten trioxide, halaman 321-322
  81. Electron energy loss analysis: theory and instrumentation, halaman 323-328
  82. Aspects of the quantitative energy loss analysis of single crystals in the transmission electron microscope, halaman 329-332
  83. Energy loss spectroscopy as an analytical tool: data handling for quantitative elemental measurements, halaman 333-336
  84. Electron microscopy and energy loss spectroscopy of iron oxides, halaman 337-338
  85. Observation of segregation in rare earth oxides by scanning transmission electron microscopy, halaman 339-340
  86. Observation by scanning transmission electron microscopy of characteristic electron energy losses due to hydrogen in transition metals, halaman 341-342
  87. Studies by STEM of crystalline inclusions in amorphous silicon, halaman 343-344
  88. Ageing sequence of Al-1.2 wt% (Mg2Si) studied by microdiffraction, halaman 345-346
  89. Calculating characteristic fluorescence effects in thin films on substrates, halaman 347-350
  90. A scanning cathodoluminescence microprobe analyser, halaman 351-354
  91. Analytical cathodoluminescence studies in the SEM, halaman 355-356
  92. Scanning Auger microscopy resolution and quantification, halaman 357-360
  93. Calculations of the effects of backscattered electrons upon the spatial resolution of the scanning Auger electron microscope due to changes in the primary energy and angle of incidence, halaman 361-364
  94. Combined Auger, x-ray and SEM studies of surfaces and interfaces , halaman 365-370
  95. Microcomputer controlled Auger microprobe, halaman 371-374
  96. A microscopic work function detector for surface studies, with application to Cs/W, halaman 375-378
  97. In situ reaction studies in a field emission source SEM/SAM, halaman 379-382
  98. UHV SEM studies of Stranski Krastanov growth systems, halaman 383-386
  99. The characterization of small metal particles by selected zone dark field and weak beam dark field TEM, halaman 387-392
  100. Dark and bright field techniques for electron microscopic observation of atomic steps on MgO single crystal surfaces, halaman 393-396
  101. The internal and surface structure of multiply twinned particles, halaman 397-400
  102. The application of electron optical techniques to the study of oxidation, halaman 401-404

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