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Detail
BukuScanning tunneling microscopy studies of island nucleation for cobalt and titanium on silicon
Bibliografi
Author: McDaniels, Tim H. ; Bennett, P. A. (Advisor)
Topik: PHYSICS; CONDENSED MATTER|ENGINEERING; MATERIALS SCIENCE
Bahasa: (EN )    ISBN: 0-599-67372-9    
Penerbit: Arizona State University     Tahun Terbit: 2000    
Jenis: Theses - Dissertation
Fulltext: 9963155.pdf (0.0B; 0 download)
Abstract
A custom built ultra-high vacuum scanning tunneling microscope (UHV STM) was used to investigate silicide island formation. A classic nucleation model was applied to the island nucleation density for cobalt (Co) and titanium (Ti) on silicon. For Co on Si(111) 7 x 7, the resulting island density was 3.9 × 10−3 monolayers (MI) regardless of the temperature or deposition rate, in the range of 200 to 500°C. This was explained with a defect trapping model, although the physical origin of the defect traps is unclear. Because of the intrinsic coupling of the trapping energy with the diffusion and binding energies, it was impossible to quantify the surface kinetics for this system. The constant island density and well aligned structures may prove useful, however, for controlling the formation of nanoscale circuit elements. For Ti on Si(100) 2 x 1 from 300 to 700°C, the island nucleation appears consistent with the classic nucleation model. An analysis of the deposition rate dependence gave a result for the critical cluster size, i = 5 ± 2. The temperature dependence gave a value of the total activation energy of 0.7 ± 0.1 eV, which includes the diffusion activation and cluster binding energies, weighted according to the value of i. Observations are consistent with the difference in diffusion activation energy for measured for Ti adsorption structures and Si/Si(100) 00) 2 x 1 self diffusion. The Ti silicide island nucleation involves both the silicon on silicon diffusion and the diffusion of Ti adsorption structures.
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