Detail A finite elemental analysis of transport processes during the growth of cadmium zinc telluride in the horizontal Bridgman furnace Bibliografi Author: Edwards, Krisanne Lynn ; Derby, Jeffrey J. (Advisor) Topik: ENGINEERING; CHEMICAL|ENGINEERING; MATERIALS SCIENCE Bahasa: (EN )    ISBN: 0-591-59340-8     Penerbit: University of Minnesota Press     Tahun Terbit: 1997     Jenis: Theses - Dissertation Fulltext: 9808931.pdf (0.0B; 11 download) Abstract Large single crystals of cadmium telluride are an integral component of infrared focal plane array detectors. The horizontal Bridgman growth of semiconductor crystals, particularly cadmium telluride and cadmium zinc telluride, is investigated with respect to the coupling of heat, momentum, and mass transport employing a two-dimensional model. In addition, an analysis of thermally-induced stress in the crystal explores the effect of the transport processes on crystalline quality. This study incorporates heat as it is conducted through the crystalline phase, while conduction and convection transport heat in the melt phase. In addition, heat conduction through the crucible is incorporated in this simulation. The model implements the Galerkin finite element method to calculate the thermal and velocity fields in the presence of the solidification interface. Initial studies explore the fundamental physics of the growth system. The shape and position of the interface are dependent on the rate of crystal growth due to the release of the latent heat of fusion. Later studies suggest optimal growth strategies to improve crystal quality and size. Results indicate the slow heat transfer through cadmium telluride and cadmium zinc telluride can manipulate the solid/liquid interface to encourage shelf growth along the top surface, which is a single crystal, typically. Opini Anda Klik untuk menuliskan opini Anda tentang koleksi ini! Lihat Sejarah Pengadaan  Konversi Metadata   Kembali

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