Detail Quantum Hall Effect in Polar Oxide Heterostructures   Oleh:  Tsukazaki, A. ; Ohtomo, A. ; Kita, T ; Ohno, Yoshinori ; Ohno, H. ; Kawasaki, M Jenis: Article from Bulletin/Magazine Dalam koleksi: SCIENCE (keterangan: ada di Proquest) vol. 315 no. 5817 (Mar. 2007), page 1388. Ketersediaan Perpustakaan FK Nomor Panggil: S01.K.2007.03 Non-tandon: 1 (dapat dipinjam: 0) Tandon: tidak ada     Lihat Detail Induk Isi artikel We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/MgxZn1-xO heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 x 1012 to 3.7 X 1012 per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two¬dimensional electrons was derived as 0.32 :t 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures. Opini Anda Klik untuk menuliskan opini Anda tentang koleksi ini! Kembali

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